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Junction capacitance as a function of voltage for diffused p-n diodes with exponential doping gradientsCapacitance calculation for diffused p-n junction with exponential doping gradients
Document ID
19710008331
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Been, J. F. (NASA Lewis Research Center Cleveland, OH, United States)
Myers, I. T. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 2, 2013
Publication Date
February 1, 1971
Subject Category
Physics, Solid-State
Report/Patent Number
E-5931
NASA-TM-X-2179
Report Number: E-5931
Report Number: NASA-TM-X-2179
Accession Number
71N17806
Funding Number(s)
CONTRACT_GRANT: 120-60
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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