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Hardening electronic devices against very high total dose radiation environmentsThe possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.
Document ID
19720010013
Document Type
Conference Paper
Authors
Buchanan, B. (Air Force Cambridge Research Labs. Hanscom AFB, MA, United States)
Shedd, W. (Air Force Cambridge Research Labs. Hanscom AFB, MA, United States)
Roosild, S. (Air Force Cambridge Research Labs. Hanscom AFB, MA, United States)
Dolan, R. (Air Force Cambridge Research Labs. Hanscom AFB, MA, United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1972
Publication Information
Publication: NASA, Washington Proc. of the Natl. Symp. on Nat. and Manmade Radiation in Space
Subject Category
PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

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Related Records

IDRelationTitle19720009951Analytic PrimaryProceedings of the National Symposium on Natural and Manmade Radiation in Space