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A Field-Effect Transistor (FET) model for ASAPThe derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.
Document ID
19760003289
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Ming, L. (International Business Machines Corp. Huntsville, AL, United States)
Date Acquired
September 3, 2013
Publication Date
April 13, 1965
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
IBM-65-201-0007-H
NASA-CR-144017
Report Number: IBM-65-201-0007-H
Report Number: NASA-CR-144017
Accession Number
76N10377
Funding Number(s)
CONTRACT_GRANT: NAS8-14000
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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