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Design rules for RCA self-aligned silicon-gate CMOS/SOS processThe CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.
Document ID
19790022305
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
March 1, 1977
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-150320
Report Number: NASA-CR-150320
Accession Number
79N30476
Funding Number(s)
CONTRACT_GRANT: NAS8-31325
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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