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Development of improved wraparound contacts for siliconA developmental process for fabricating 2 X 4 cm back surface field silicon solar cells featuring wraparound contacts and screen printed dielectric isolation is described. The process was then used to fabricate a number of cells for evaluation and study, as well as to establish the validity of the process sequence. While a number of cells exhibiting relatively good conversion efficiencies were produced, nearly all had low I-V curve factors for the level of efficiencies attained. Cells with conversion efficiencies of more than 15 percent (air mass zero and 25 C) had fill factors of only 0.76. Evidence as to the cause of this has not been conclusive, but is most probably linked to isolation failure in the wraparound dielectric and associated shunting problems.
Document ID
19800010280
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Thornhill, J. W.
(Spectrolab, Inc. Sylmar, CA, United States)
Date Acquired
September 4, 2013
Publication Date
December 1, 1979
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-159748
Report Number: NASA-CR-159748
Accession Number
80N18554
Funding Number(s)
CONTRACT_GRANT: NAS3-20065
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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