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Process Research on Polycrystalline Silicon Material (PROPSM)The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.
Document ID
19830025067
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Culik, J. S.
(Solarex Corp. Rockville, MD, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
DOE/JPL-955902-83/9
QR-9
NAS 1.26:172963
JPL-9950-842
NASA-CR-172963
Report Number: DOE/JPL-955902-83/9
Report Number: QR-9
Report Number: NAS 1.26:172963
Report Number: JPL-9950-842
Report Number: NASA-CR-172963
Accession Number
83N33338
Funding Number(s)
CONTRACT_GRANT: JPL-95590
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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