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A new very high voltage semiconductor switchA new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
Document ID
19850011936
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sundberg, G. R. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-TM-86957
NAS 1.15:86957
E-2480
Report Number: NASA-TM-86957
Report Number: NAS 1.15:86957
Report Number: E-2480
Meeting Information
Meeting: Ann. Power Electron. Spec. Conf. (PESC),
Location: Toulouse
Country: France
Start Date: June 24, 1985
End Date: June 28, 1985
Sponsors: Inst. of Electrical and Electronics Engineers
Accession Number
85N20246
Funding Number(s)
PROJECT: RTOP 506-55-72
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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