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The 20 GHz power GaAs FET developmentThe development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.
Document ID
19870007539
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Crandell, M. (TRW Electronic Systems Group Redondo Beach, CA, United States)
Date Acquired
September 5, 2013
Publication Date
September 1, 1986
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
S/N-36778
NASA-CR-179546
NAS 1.26:179546
Report Number: S/N-36778
Report Number: NASA-CR-179546
Report Number: NAS 1.26:179546
Accession Number
87N16972
Funding Number(s)
CONTRACT_GRANT: NAS3-22503
PROJECT: RTOP 650-66-22
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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