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SiC device development for high temperature sensor applicationsProgress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.
Document ID
19930004489
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Shor, J. S. (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Goldstein, David (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Kurtz, A. D. (Kulite Semi-Conductor Products, Inc. Leonia, NJ, United States)
Osgood, R. M. (Columbia Univ. New York, NY., United States)
Date Acquired
September 6, 2013
Publication Date
September 1, 1992
Publication Information
Publication: NASA. Langley Research Center, The 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments
Subject Category
Instrumentation And Photography
Accession Number
93N13677
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19930004473Collected WorksThe 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments19930004473Collected WorksThe 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments
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