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Design and qualification of the SEU/TD Radiation Monitor chipThis report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.
Document ID
19930013852
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Buehler, Martin G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Blaes, Brent R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Soli, George A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Zamani, Nasser
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hicks, Kenneth A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 6, 2013
Publication Date
October 1, 1992
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.26:192797
NASA-CR-192797
JPL-PUBL-92-18
Report Number: NAS 1.26:192797
Report Number: NASA-CR-192797
Report Number: JPL-PUBL-92-18
Accession Number
93N23041
Funding Number(s)
CONTRACT_GRANT: NAS7-918
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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