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evaluation of radiation effects in re-oxidized nitrided oxide devices by hot carrier stressing at 77 kAn attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.
Document ID
19940016611
Document Type
Conference Paper
Authors
Das, N. C.
(Phillips Lab. Kirtland AFB, NM, United States)
Nathan, V.
(Phillips Lab. Kirtland AFB, NM, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1993
Publication Information
Publication: New Mexico Univ., The Fifth NASA Symposium on VLSI Design
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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