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comparison of single event upset rates for microelectronic memory devices during interplanetary solar particle eventsVariability in the methods and models used for single event upset calculations in microelectronic memory devices can lead to a range of possible upset rates. Using heavy ion and proton data for selected DRAM and SRAM memories, we have calculated an array of upset rates in order to compare the Adams worst case interplanetary solar flare model to a model proposed by scientists at the Jet Propulsion Laboratory. In addition, methods of upset rate calculation are compared: the Cosmic Ray Effects on Microelectronics CREME code and a Monte Carlo algorithm developed at the Applied Physics Laboratory. The results show that use of a more realistic, although still conservative, model of the space environment can have significant cost saving benefits.
Document ID
19940016612
Document Type
Conference Paper
Authors
Mckerracher, P. L.
(Johns Hopkins Univ. Laurel, MD, United States)
Kinnison, J. D.
(Johns Hopkins Univ. Laurel, MD, United States)
Maurer, R. H.
(Johns Hopkins Univ. Laurel, MD, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1993
Publication Information
Publication: New Mexico Univ., The Fifth NASA Symposium on VLSI Design
Subject Category
SOLAR PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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