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faulty behavior of asynchronous storage elementsIt is often assumed that the faults in storage elements (SE's) can be modeled as output/input stuck-at-faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. A more accurate higher level fault model for elementary SE's used in asynchronous circuits is presented. This model offers better representation of the physical failures. It is shown that the stuck-at model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SE's that are not covered by the stuck-at model. These include data-feed-through behaviors that cause the SE to be combinational. Fault models for complex SE cells can be obtained without a significant loss of information about the structure of the circuit.
Document ID
19940016635
Document Type
Conference Paper
Authors
Al-Assadi, Waleed K.
(Colorado State Univ. Fort Collins, CO, United States)
Lu, Ding
(Colorado State Univ. Fort Collins, CO, United States)
Jayasumana, Anura P.
(Colorado State Univ. Fort Collins, CO, United States)
Malaiya, Yashwant K.
(Colorado State Univ. Fort Collins, CO, United States)
Tong, Carol Q.
(Colorado State Univ. Fort Collins, CO, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1993
Publication Information
Publication: New Mexico Univ., The Fifth NASA Symposium on VLSI Design
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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