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Radiation Effects on Advanced Flash MemoriesFlash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.
Document ID
20000055766
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
Authors
Nguyen, D. N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Guertin, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Swift, G. M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Johnston, A. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 1998
Subject Category
Atomic And Molecular Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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