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Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential ApplicationsDevelopments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.
Document ID
20010000386
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Chen, Kuo-Tong
(Fisk Univ. Nashville, TN United States)
Shi, Detang
(Fisk Univ. Nashville, TN United States)
Morgan, S. H.
(Fisk Univ. Nashville, TN United States)
Collins, W. Eugene
(Fisk Univ. Nashville, TN United States)
Burger, Arnold
(Fisk Univ. Nashville, TN United States)
Date Acquired
August 20, 2013
Publication Date
February 1, 1997
Publication Information
Publication: NASA University Research Centers Technical Advances in Education, Aeronautics, Space, Autonomy, Earth and Environment
Volume: 1
Subject Category
Solid-State Physics
Report/Patent Number
URC97027
Funding Number(s)
CONTRACT_GRANT: NAGW-2925
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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