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Radiation Response of Emerging FeRAM TechnologyThe test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.
Document ID
20020028806
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Nguyen, D. N. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Scheick, L. Z. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2001
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2001: Proceedings
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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IDRelationTitle20020028797Collected WorksNon-Volatile Memory Technology Symposium 2001: Proceedings
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