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Non-Volatile Memory Technology Symposium 2001: ProceedingsThis publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.
Document ID
20020028797
Acquisition Source
Headquarters
Document Type
Conference Proceedings
Authors
Aranki, Nazeeh (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Daud, Taher (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Strauss, Karl (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
September 7, 2013
Publication Date
November 1, 2001
Subject Category
Computer Operations And Hardware
Report/Patent Number
JPL-Publ-01-15
Meeting Information
Meeting: Non-Volatile Memory Technology Symposium
Location: San Diego, CA
Country: United States
Start Date: November 7, 2001
End Date: November 8, 2001
Sponsors: Aerospace and Electronic Systems Society, Electron Devices Society
Funding Number(s)
CONTRACT_GRANT: NAS7-1407
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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