NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Silicon Carbide Schottky Barrier DiodeThis chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
Document ID
20050080762
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Zhao, Jian H.
(Rutgers - The State Univ. Piscataway, NJ, United States)
Sheng, Kuang
(Rutgers - The State Univ. Piscataway, NJ, United States)
Lebron-Velilla, Ramon C.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
September 7, 2013
Publication Date
January 1, 2004
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
WBS: WBS 22-612-50-81-12
Distribution Limits
Public
Copyright
Public Use Permitted.
No Preview Available