Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.