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TID and SEE Response of an Advanced Samsung 4G NAND Flash MemoryInitial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment.
Document ID
20080045423
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Oldham, Timothy R. (Perot Systems Corp. Greenbelt, MD, United States)
Friendlich, M. (Muniz Engineering, Inc. Greenbelt, MD United States)
Howard, J. W. (Muniz Engineering, Inc. Greenbelt, MD United States)
Berg, M. D. (Muniz Engineering, Inc. Greenbelt, MD United States)
Kim, H. S. (Muniz Engineering, Inc. Greenbelt, MD United States)
Irwin, T. L. (Muniz Engineering, Inc. Greenbelt, MD United States)
LaBel, K. A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 24, 2013
Publication Date
January 1, 2007
Subject Category
Solid-State Physics
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Honolulu, HI
Country: United States
Start Date: July 23, 2007
End Date: July 27, 2007
Distribution Limits
Public
Copyright
Public Use Permitted.

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