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MMIC Amplifier Produces Gain of 10 dB at 235 GHzThe first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.
Document ID
20090041656
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
External Source(s)
http://www.techbriefs.com/component/content/article/1778
Authors
Dawson, Douglas (California Inst. of Tech. Pasadena, CA, United States)
Fung, King Man (California Inst. of Tech. Pasadena, CA, United States)
Lee, Karen (California Inst. of Tech. Pasadena, CA, United States)
Samoska, Lorene (California Inst. of Tech. Pasadena, CA, United States)
Wells, Mary (California Inst. of Tech. Pasadena, CA, United States)
Gaier, Todd (California Inst. of Tech. Pasadena, CA, United States)
Kangaslahti, Pekka (California Inst. of Tech. Pasadena, CA, United States)
Grundbacher, Ronald (Northrop Grumman Corp. United States)
Lai, Richard (Northrop Grumman Corp. United States)
Raja, Rohit (Northrop Grumman Corp. United States)
Liu, Po-Hsin (Northrop Grumman Corp. United States)
Date Acquired
August 24, 2013
Publication Date
May 1, 2007
Publication Information
Publication: NASA Tech Briefs, May 2007
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NPO-42202
Distribution Limits
Public
Copyright
Public Use Permitted.

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IDRelationTitle20090041630Collected WorksNASA Tech Briefs, May 2007
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