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Single-Event Effect Response of a Commercial ReRAMWe show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.
Document ID
20140008673
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Chen, Dakai (NASA Goddard Space Flight Center Greenbelt, MD United States)
Label, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States)
Buchner, Stephen (Naval Research Lab. Washington, DC, United States)
Khachatrian, Ani (Naval Research Lab. Washington, DC, United States)
Roche, Nicolas (Naval Research Lab. Washington, DC, United States)
Date Acquired
July 2, 2014
Publication Date
May 19, 2014
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN14581
GSFC-E-DAA-TN36682
Report Number: GSFC-E-DAA-TN14581
Report Number: GSFC-E-DAA-TN36682
Meeting Information
Meeting: Single Event Effects (SEE) Symposium and the Military and Aerospace Programmable Logic Devices (MAPLD) Workshop
Location: La Jolla, CA
Country: United States
Start Date: May 19, 2014
End Date: May 22, 2014
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
commercial-off-the-shelf (COT)
Radiation
Read-Only Memory

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