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Single-Event Effect Performance of a Commercial ReRAMWe show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFI.
Document ID
20150000273
Acquisition Source
Goddard Space Flight Center
Document Type
Poster
Authors
Chen, Dakai (NASA Goddard Space Flight Center Greenbelt, MD United States)
Kim, Hak S. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States)
LaBel, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD United States)
Buchner, Stephen (Naval Research Lab. Washington, DC, United States)
Khachatrian, Ani (Naval Research Lab. Washington, DC, United States)
Roche, Nicolas (Naval Research Lab. Washington, DC, United States)
Date Acquired
January 8, 2015
Publication Date
July 14, 2014
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN15795
Meeting Information
Meeting: (IEEE) Nuclear and Space Radiation Effects Conference (NSREC)
Location: Paris
Country: France
Start Date: July 14, 2014
End Date: July 18, 2014
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
ReRAM
single-event functional interrupt
non-volatile memory

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