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Single-Event Effects in Silicon Carbide Power DevicesThis report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.
Document ID
20150017740
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
External Source(s)
https://nepp.nasa.gov/
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Casey, Megan C. (NASA Goddard Space Flight Center Greenbelt, MD United States)
LaBel, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Ikpe, Stanley (NASA Langley Research Center Hampton, VA, United States)
Topper, Alyson D. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Wilcox, Edward P. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony M. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
September 11, 2015
Publication Date
June 23, 2015
Subject Category
Electronics And Electrical Engineering
Energy Production And Conversion
Report/Patent Number
GSFC-E-DAA-TN24877
Report Number: GSFC-E-DAA-TN24877
Meeting Information
Meeting: NEPP Electronic Technology Workshop
Location: Greenbelt, MD
Country: United States
Start Date: June 23, 2015
End Date: June 26, 2015
Sponsors: NASA Goddard Space Flight Center
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
heavy-ion single-event effects
power electronics
failure rate prediction

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