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Single-Event Effect Performance of a Conductive-Bridge Memory EEPROMWe investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.
Document ID
20150023547
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Chen, Dakai (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States)
Berg, Melanie (ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Figueiredo, Marco (Orbital Sciences Corp. Greenbelt, MD, United States)
Seidleck, Christina (ASRC Federal Space and Defense Greenbelt, MD, United States)
LaBel, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
December 28, 2015
Publication Date
July 13, 2015
Subject Category
Space Radiation
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN24782
Report Number: GSFC-E-DAA-TN24782
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Boston, MA
Country: United States
Start Date: July 13, 2015
End Date: July 17, 2015
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: IACRODTRA10027-8002
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
single event effects
non-volatile memory
radiation effects in ICs
heavy ion testing

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