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Recent Radiation Test Results for Power MOSFETsSingle-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
Document ID
20160000792
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Topper, Alyson D. (MEI Technologies, Inc. Greenbelt, MD, United States)
Casey, Megan C. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Wilcox, Edward P. (MEI Technologies, Inc. Greenbelt, MD, United States)
Phan, Anthony M. (MEI Technologies, Inc. Greenbelt, MD, United States)
Kim, Hak S. (MEI Technologies, Inc. Greenbelt, MD, United States)
LaBel, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
January 13, 2016
Publication Date
July 11, 2013
Subject Category
Electronics And Electrical Engineering
Solid-State Physics
Report/Patent Number
GSFC-500-13-D-0200
Report Number: GSFC-500-13-D-0200
Meeting Information
Meeting: Nuclear and Space Radiation Effects Conference
Location: San Francisco, CA
Country: United States
Start Date: July 8, 2013
End Date: July 12, 2013
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: IACRO# 11-43951
Distribution Limits
Public
Copyright
Public Use Permitted.

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