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500 C Electronic Packaging and Dielectric Materials for High Temperature ApplicationsHigh-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.
Document ID
20170003040
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Chen, Liang-yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH United States)
Hunter, Gary W.
(NASA Glenn Research Center Cleveland, OH United States)
Date Acquired
April 6, 2017
Publication Date
July 29, 2016
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN34245
Report Number: GRC-E-DAA-TN34245
Meeting Information
Meeting: 2016 IEEE National Aerospace and Electronics Conference (NAECON) and Ohio Innovation Summit (OIS)
Location: Dayton, OH
Country: United States
Start Date: July 25, 2016
End Date: July 29, 2016
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: WBS 811073.02.24.01.37
CONTRACT_GRANT: NNC13BA10B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
dielectric performance
Packaging
High temperature
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