NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky DiodeThis study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.
Document ID
20170003887
Acquisition Source
Goddard Space Flight Center
Document Type
Other
Authors
Lauenstein, J.-M. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Casey, M. C. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, E. P. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Topper, A. D. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
April 25, 2017
Publication Date
February 18, 2014
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN39790
Report Number: GSFC-E-DAA-TN39790
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
silicon carbide (SiC)
single event effect (SEE)
Schottky diode

Related Records

There are no records associated with this record.
No Preview Available