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Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUBMicrosemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Document ID
20170004370
Acquisition Source
Goddard Space Flight Center
Document Type
Other
Authors
Campola, M. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Freeman, B. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Yau, K. (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
May 4, 2017
Publication Date
March 2, 2017
Subject Category
Solid-State Physics
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN41076
Report Number: GSFC-E-DAA-TN41076
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
total ionizing dose (TID)
enhanced low dose rate sensitivity (ELDRS)

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