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Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test ReportThe purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.
Document ID
20170009001
Acquisition Source
Goddard Space Flight Center
Document Type
Other
Authors
Campola, Michael (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wyrwas, Edward (Lentech, Inc. Greenbelt, MD, United States)
Date Acquired
September 26, 2017
Publication Date
April 11, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN45672
Report Number: GSFC-E-DAA-TN45672
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Flash Memory
block errors
total ionizing dose (TID)

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