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Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit ResistorsThe DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Document ID
20180000657
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Neudeck, Philip G. (NASA Glenn Research Center)
Date Acquired
January 18, 2018
Publication Date
September 17, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN45116
Report Number: GRC-E-DAA-TN45116
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017
Location: Washington, DC
Country: United States
Start Date: September 17, 2017
End Date: September 22, 2017
Sponsors: Materials Research Society
Funding Number(s)
WBS: WBS 109492.02.03.02.11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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