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Reliability Concerns for Flying SiC Power MOSFETs in SpaceSiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
Document ID
20180002440
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Galloway, K. F. (Vanderbilt Univ. Nashville, TN, United States)
Witulski, A. F. (Vanderbilt Univ. Nashville, TN, United States)
Schrimpf, R. D. (Vanderbilt Univ. Nashville, TN, United States)
Sternberg, A. L. (Vanderbilt Univ. Nashville, TN, United States)
Ball, D. R. (Vanderbilt Univ. Nashville, TN, United States)
Javanainen, A. (Jyvaskyla Univ. Finland)
Reed, R. A. (Vanderbilt Univ. Nashville, TN, United States)
Sierawski, B. D. (Vanderbilt Univ. Nashville, TN, United States)
Lauenstein, J.-M. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
April 17, 2018
Publication Date
April 16, 2018
Subject Category
Chemistry And Materials (General)
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN54858
GSFC-E-DAA-TN65884
Report Number: GSFC-E-DAA-TN54858
Report Number: GSFC-E-DAA-TN65884
Meeting Information
Meeting: Hardened Electronics and Radiation Technology (HEART)
Location: Tucson, AZ
Country: United States
Start Date: April 16, 2018
End Date: April 20, 2018
Sponsors: GuideStar USA, Inc.
Funding Number(s)
OTHER: Academy of Finland NO. 2513553
CONTRACT_GRANT: NNX17AD09G
CONTRACT_GRANT: ESA-ESTEC 4000111630/14/NL/PA
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
silicon carbide
single-event burnout
single-event effects
power MOSFET

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