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Physically-Informed Artificial Neural Networks for Atomistic Modeling of MaterialsA new approach is presented for the development of classical interatomic potentials using physically-informed neural networks (PINN) combined with an analytical bond-order atomic interaction model. Due to the strong physical underpinnings, the PINN potentials demonstrate much better transferability than the existing machine-learning potentials while drastically improving the accuracy in comparison with traditional potentials. PINN potentials can be constructed for both metallic and covalent materials in a unified manner. A number of applications of PINN potentials to large-scale molecular dynamics and Monte Carlo simulations and calculation of thermal and mechanical properties of diverse materials are demonstrated. Some of the specific materials systems include silicon and aluminum, as well as alloys and compounds. Computational aspects of PINN potentials are discussed and future developments in this field are outlined.
Document ID
20200002821
Acquisition Source
Langley Research Center
Document Type
Presentation
Authors
J Hickman
(National Institute of Standards and Technology Gaithersburg, Maryland, United States)
G P Purja Pun ORCID
(George Mason University Fairfax, Virginia, United States)
V I Yamakov ORCID
(National Institute of Aerospace Hampton, Virginia, United States)
Y Mishin ORCID
(George Mason University Fairfax, Virginia, United States)
Date Acquired
April 20, 2020
Publication Date
August 21, 2019
Subject Category
Cybernetics, Artificial Intelligence And Robotics
Report/Patent Number
NF1676L-33710
Meeting Information
Meeting: USACM Workshop: Recent Advances in the Modeling and Simulation of the Mechanics of Nanoscale Materials
Location: Philadelphia, PA
Country: US
Start Date: August 21, 2019
End Date: August 23, 2019
Sponsors: United States Association for Computational Mechanics
Funding Number(s)
WBS: 698259.02.07.07.03.01
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
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