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Micron MT29F1T08CMHBBJ4 1Tb NAND Flash Memory Single Event Effect Characterization Test ReportThe purpose of this testing is to characterize the Single-Event Effect (SEE) response of the Micron MT29F1T08CMHBBJ4 3D NAND Flash memory. The MT29F1T08CMHBBJ4 is a 1Tb NAND Flash memory, consisting of a four-die stack of 256Gb MLC dice packaged in a 132-ball VBGA package. All data presented is the result of testing only the top die (256Gb) of the package. Testing was performed at two heavy-ion cyclotron facilities with an identical test setup, over the course of four test trips from 2017-2019.
Document ID
20205005993
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Test Report
Authors
Edward P Wilcox
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Michael Joseph Campola
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
August 5, 2020
Publication Date
August 31, 2020
Publication Information
Subject Category
Numerical Analysis
Funding Number(s)
PROJECT: WFIRST
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert
Keywords
Single Event Effect (SEE)
NAND
Flash Memory
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