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Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSIThis invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.
Document ID
Document Type
Conference Paper
P Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
D Spry
(Glenn Research Center Cleveland, Ohio, United States)
M Krasowski
(Glenn Research Center Cleveland, Ohio, United States)
L Chen
(Ohio Aerospace Institute Cleveland, Ohio, United States)
N Prokop
(Glenn Research Center Cleveland, Ohio, United States)
L Greer
(Glenn Research Center Cleveland, Ohio, United States)
C Chang
(HX5, LLC )
Date Acquired
August 17, 2020
Publication Date
December 12, 2020
Publication Information
Subject Category
Electronics And Electrical Engineering
Spacecraft Instrumentation And Astrionics
Meeting Information
Meeting: 2020 IEEE International Electron Devices Meeting (IEDM)
Location: Virtual
Country: US
Start Date: December 12, 2020
End Date: December 16, 2020
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 336763.
Distribution Limits
Public Use Permitted.
Technical Review
NASA Technical Management
Integrated Circuits
Silicon Carbide
High Temperature
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