NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Combined Total Ionizing Dose and Single-Event Effects on a 22 nm Fully-Depleted Silicon-on-Insulator Test VehicleTotal ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.
Document ID
20205010697
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Megan C Casey (Goddard Space Flight Center Greenbelt, Maryland, United States)
Landen D Ryder (Goddard Space Flight Center Greenbelt, Maryland, United States)
Stefania Esquer (The University of Texas at El Paso El Paso, Texas, United States)
Rachel M Brewer (Vanderbilt University Nashville, Tennessee, United States)
Scott Stansberry (Science Systems and Applications (United States) Lanham, Maryland, United States)
Jonny Pellish (Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
November 24, 2020
Publication Date
December 2, 2020
Publication Information
Publisher: NASA Electronic Parts and Packaging (NEPP) Program
URL: https://nepp.nasa.gov/
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC), virtual event
Location: Virtual
Country: US
Start Date: November 29, 2020
End Date: December 30, 2020
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 724297.40.49.04.01
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
Single Expert
Keywords
total ionizing dose
single-event effects
combined radiation effects
fully-depleted silicon-on-insulator

Related Records

There are no records associated with this record.
No Preview Available