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Direct Ionization from Low-Energy Electrons in a Highly-Scaled CMOS ProcessLow-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.
Document ID
20205010699
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
External Source(s)
https://nepp.nasa.gov/
Authors
Megan C Casey (Goddard Space Flight Center Greenbelt, Maryland, United States)
Scott Stansberry (Science Systems & Applications, Inc. Hampton, VA, USA)
Matthew L Breeding (Vanderbilt University Nashville, Tennessee, United States)
Robert A Reed (Vanderbilt University Nashville, Tennessee, United States)
Jonathan A Pellish (Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
November 24, 2020
Publication Date
December 3, 2020
Publication Information
URL: https://nepp.nasa.gov/
Subject Category
Space Radiation
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: virtual event
Country: US
Start Date: November 29, 2020
End Date: December 30, 2020
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 724297.40.49.04.01
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
Single Expert
Keywords
low-energy electrons
single-event effects
fully-depleted silicon-on-insulator
radiation effects

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