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Upscaling of 500 °C Durable SiC JFET-R Integrated CircuitsAt HiTEC2018, NASA Glenn Research Center reported the first demonstration of yearlong 500°C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) junction field effect transistors and resistors (JFET-R). This HiTEC 2021submissionupdateson-going efforts at NASA Glenn spanning two subsequent prototype IC generations “11 and 12” to increase both complexity and durability of these ICs. Increased chip complexities of around 1000 transistors/chip for Gen. 11and near 3000 transistors/chip for Gen. 12 aremade possibleby reductions in minimum layout feature sizes (including resistorwidth shrinkage from 6 μm to 2μm) coupled with enlarged die size (from 3x3 mm to 5x5mm). Gen. 11 ICs electrically tested to date include an 8-bit delta-sigma analog to digital converter (ADC) as well as upscaled random access memory (RAM)and nearly 1 kbit read only memory (ROM). However, Gen. 11 prototype ICs exhibited significantly lower yield and durability than Gen. 10 ICs. Development of revised processing is being investigated towards mitigating these issues in subsequentGen. 12 fabrication runcurrentlyin progress.
Document ID
Document Type
Conference Paper
Philip G Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
David J Spry
(Glenn Research Center Cleveland, Ohio, United States)
Michael J Krasowski
(Glenn Research Center Cleveland, Ohio, United States)
Liangyu Chen
(Ohio Aerospace Institute Cleveland, Ohio, United States)
Lawrence C Greer
(Glenn Research Center Cleveland, Ohio, United States)
Carl W Chang
(HX5, LLC)
Dorothy Lukco
(HX5, LLC)
Glenn M Beheim
Norman F Prokop
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
March 11, 2021
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2021 IMAPs International Conference on High Temperature Electronics
Location: Virtual
Country: US
Start Date: April 26, 2021
End Date: April 29, 2021
Sponsors: International Microelectronics Assembly & Packaging Society
Funding Number(s)
WBS: 427922.04.02.01
Distribution Limits
Public Use Permitted.
Technical Review
NASA Technical Management
Silicon Carbide
Integrated Circuit
High Temperature
Analog to Digital Conversion
Random Access Memory
Read Only Memory
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