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Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs
Document ID
20210015801
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Philip G Neudeck (Glenn Research Center Cleveland, Ohio, United States)
David J Spry (Glenn Research Center Cleveland, Ohio, United States)
Michael J Krasowski (Glenn Research Center Cleveland, Ohio, United States)
Liangyu Chen (Ohio Aerospace Institute Cleveland, Ohio, United States)
Date Acquired
May 18, 2021
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2021 International Conference on Compound Semiconductor Manufacturing Technology
Location: Virtual
Country: US
Start Date: May 24, 2021
End Date: May 27, 2021
Sponsors: Compound Semiconductor
Funding Number(s)
WBS: 427922.04.02.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
silicon carbide
integrated circuit
JFET
Venus
High temperature

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