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Non-Volatile, Low Power, and High Density SiC Memory For Future Venus MissionsLong lived memory would transform Venus landers & missions. Venus durable memory demonstrated in earlier HOTTech with impractically high power and low bit capacity. This project seeks to develop and demonstrate the world’s first Venus-durable low power memory device (Non-Volatile Random Access Memory (NVRAM) to enhance extended Venus surface missions.
Document ID
20220007839
Acquisition Source
Glenn Research Center
Document Type
Other - Quad chart for posting on public-facing NASA website.
Authors
P. Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
D. Spry
(Glenn Research Center Cleveland, Ohio, United States)
N. Prokop
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
May 19, 2022
Publication Date
June 17, 2022
Publication Information
Subject Category
Electronics And Electrical Engineering
Spacecraft Instrumentation And Astrionics
Funding Number(s)
WBS: 427922.04.10.01.03
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
silicon carbide
non-volatile memory
integrated circuit
high temperature
JFET
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