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Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition
Document ID
20220014391
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
External Source(s)
Authors
A Antonsanti
(Southeastern Universities Research Association Washington D.C., District of Columbia, United States)
V Goiffon
(National Higher School of Aeronautics and Space Toulouse, France)
A Le Roch
(Universities Space Research Association Columbia, Maryland, United States)
F Roy
(STMicroelectronics (France) Montrouge, France)
V Malherbe
(STMicroelectronics (France) Montrouge, France)
P Roche
(STMicroelectronics (France) Montrouge, France)
C Virmontois
(Centre National D'Etudes Spatiales Paris, France)
L Ryder
(Goddard Space Flight Center Greenbelt, Maryland, United States)
J -M Lauenstein
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
September 21, 2022
Publication Date
October 3, 2022
Publication Information
Subject Category
Solid-State Physics
Space Radiation
Meeting Information
Meeting: RADiation and its Effects on Components and Systems Conference (RADECS 2022)
Location: Venice
Country: IT
Start Date: October 3, 2022
End Date: October 7, 2022
Sponsors: RADECS Association
Funding Number(s)
WBS: 817091.40.31.51.04
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
Single Expert
Keywords
CMOS Image Sensor (CIS)
Displacement Damage Dose (DDD)
Dark Current Random Telegraph Signal (DC-RTS)
Pinned Photodiode (PPD)
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