NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Single-Event Effect Radiation Test Report of the Infineon IRF5NJ9540 p-Type Power MOSFETThis study was undertaken to determine the single-event effect susceptibility of the IRF5NJ9540 p-channel power MOSFET from Infineon. Heavy-ion testing was conducted at the Texas A&M University (TAMU) Cyclotron.
Document ID
20220017278
Acquisition Source
Goddard Space Flight Center
Document Type
Technical Memorandum (TM)
External Source(s)
https://radhome.gsfc.nasa.gov/
Authors
Jason M Osheroff (Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
November 16, 2022
Publication Date
September 7, 2022
Publication Information
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
NASA/TM-20220017278
Funding Number(s)
WBS: 000278.05.07.04.01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert

Related Records

There are no records associated with this record.
No Preview Available