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Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image AcquisitionDark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.
Document ID
20230004324
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Aubin Antonsanti ORCID
(Southeastern Universities Research Association Washington D.C., District of Columbia, United States)
Vincent Goiffon ORCID
(National Higher School of Aeronautics and Space Toulouse, France)
Franc¸ois Roy ORCID
(STMicroelectronics (France) Montrouge, France)
Alexandre Le Roch
(Oak Ridge Associated Universities Oak Ridge, Tennessee, United States)
Landen D Ryder
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Victor Malherbe
(STMicroelectronics (France) Montrouge, France)
Philippe Roche
(STMicroelectronics (France) Montrouge, France)
Olivier Nier
(STMicroelectronics (France) Montrouge, France)
Cedric Virmontois
(Centre National D'Etudes Spatiales Paris, France)
Jean-Marie Lauenstein ORCID
(Goddard Space Flight Center Greenbelt, Maryland, United States)
Date Acquired
April 3, 2023
Publication Date
April 4, 2023
Publication Information
Publication: IEEE Transactions on Nuclear Science
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Volume: 70
Issue Publication Date: April 1, 2023
ISSN: 0018-9499
e-ISSN: 1558-1578
Subject Category
Electronics and Electrical Engineering
Space Radiation
Meeting Information
Meeting: Radiation and its Effects on Components and Systems (RADECS)
Location: Venice
Country: IT
Start Date: October 3, 2022
End Date: October 7, 2022
Sponsors: iXBlue (France)
Funding Number(s)
WBS: 817091.40.31.51.04
CONTRACT_GRANT: 80GSFC21M0002
CONTRACT_GRANT: 80HQTR21CA005
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
Single Expert
Keywords
CMOS Image Sensor (CIS)
Total Ionizing Dose (TID)
Metal-Oxide-Semiconductor (MOS)
Interface-States
Oxide-Traps
Capacitive Deep Trench Isolation (CDTI)
X-rays
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