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Electrical and Dielectric Characterizations of HTCC Electronic Packages for High Temperature Harsh Environment ApplicationsA prototype high temperature co-fired ceramic (HTCC) alumina packaging system composed of a 32-I/Os package and a compatible circuit board was previously developed and demonstrated for long term operation in 500 °C environments. The electrical / dielectric parasitic parameters of that chip level package were characterized and reported. This co-fired packaging system with platinum (Pt) conductor has successfully facilitated tests of silicon carbide (SiC) analog and digital integrated circuits (ICs) developed at NASA GRC at 500°C for up to 10,000 hours in ambient oven environment and 60 earth days in Venus surface environment with simulated temperature, pressure, and chemical constituents. Based on these previous results, this paper introduces new designs of Pt-HTCC packages with 16, 24, and 44 I/Os for packaging a new generation SiC ICs with 8, 24, 56, 62, and 72 I/Os to be tested in high temperature harsh environments. The package with 44 I/Os is specifically designed for the new SiC ICs with 56, 62, and 72-I/Os and electrical connection needs, the power pads of this package are consolidated, and an array of I/O pads distributed on separated vertical levels (inside the package) is used to control the overall package dimensions and mitigate the parasitic effects at high temperatures. This paper will present the detailed design of these chip-level packages and results of electrical and dielectric characterization of these newly fabricated chip-level Pt-HTCC packages.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Liangyu Chen
(Ohio Aerospace Institute Cleveland, Ohio, United States)
Philip G Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
David J Spry
(Glenn Research Center Cleveland, Ohio, United States)
Gary W Hunter
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
April 13, 2023
Subject Category
Electronics and Electrical Engineering
Meeting Information
Meeting: International Conference and Exhibition on High Temperature Electronics (HiTEC)
Location: Albuquerque, NM
Country: US
Start Date: April 18, 2023
End Date: April 20, 2023
Sponsors: International Microelectronics Assembly & Packaging Society
Funding Number(s)
WBS: 427922.
Distribution Limits
Public Use Permitted.
High temperature
harsh environment
500 °C
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