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High Temperature Devices for Aerospace ApplicationsThis presentation will overview important new capabilities and benefits that next-generation higher temperature electronics promise for a variety of aerospace systems and missions. Initial aerospace infusions of higher temperature electronics to be discussed include jet engines and the prolonged robotic exploration of the Venus surface. Complete redesign of systems compared to prior conventional electronics practices would yield the most revolutionary benefits. However, the inherent higher risk and expense associated with new technology adoption will likely drive a more evolutionary technology infusion process, especially since flight qualification demands large safety margins and testing that ensures reliable operation for far longer than actual mission duration. SiC pn-junction based devices are inherently capable of the most durable operation at the highest application temperatures compared other transistor technologies, but such integrated circuits (ICs) will never achieve integration levels near today’s silicon ICs. Extreme temperature high-power devices will also be de-rated compared to room-temperature performance. While the high temperature market will always be small compared to the conventional temperature mass-market, compatibility and leveraging of existing foundry manufacturing is vital to the establishment of a sustainable high temperature electronics ecosystem sufficient to significantly improve aerospace systems.
Document ID
20230009977
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Philip Neudeck ORCID
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
July 6, 2023
Subject Category
Electronics and Electrical Engineering
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials (ICSCRM)
Location: Sorrento
Country: IT
Start Date: September 17, 2023
End Date: September 22, 2023
Sponsors: University of Naples Federico II
Funding Number(s)
PROJECT: 427922.04.10.01.03
Distribution Limits
Public
Copyright
Portions of document may include copyright protected material.
Technical Review
NASA Technical Management
Keywords
High Temperature
Silicon Carbide
Integrated Circuit
Jet Engine
Venus Lander
Pressure Sensor
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