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Single-Event Effects Response of 96- and 176-Layer 3D NAND Flash MemoriesSingle-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
Document ID
20230010030
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Edward P. Wilcox (Goddard Space Flight Center Greenbelt, Maryland, United States)
Matthew B. Joplin (Goddard Space Flight Center Greenbelt, Maryland, United States)
Melanie D. Berg (Science Systems and Applications (United States) Lanham, Maryland, United States)
Date Acquired
July 7, 2023
Publication Date
July 26, 2023
Publication Information
Publication: Presentation for posting on public website
Publisher: NASA Electronic Parts and Packaging (NEPP) Program
URL: https://nepp.nasa.gov/
Subject Category
Electronics and Electrical Engineering
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Kansas City, Missouri
Country: US
Start Date: July 24, 2023
End Date: July 28, 2023
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 817091.40.31.51.04
CONTRACT_GRANT: 80GSFC18C0120
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert

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