NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Single-Event Effects Response of 96- and 176-Layer 3D NAND Flash MemoriesSingle-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
Document ID
20230010164
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Edward P Wilcox (Goddard Space Flight Center Greenbelt, Maryland, United States)
Matthew B Joplin (Goddard Space Flight Center Greenbelt, Maryland, United States)
Melanie D Berg (Science Systems and Applications (United States) Lanham, Maryland, United States)
Date Acquired
July 11, 2023
Publication Date
July 27, 2023
Publication Information
URL: https://nepp.nasa.gov/
Subject Category
Electronics and Electrical Engineering
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Kansas City, MO
Country: US
Start Date: July 24, 2023
End Date: July 28, 2023
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: 817091.40.31.51.04
CONTRACT_GRANT: 80GSFC18C0120
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert

Related Records

IDRelationTitle20230010030See AlsoSingle-Event Effects Response of 96- and 176-Layer 3D NAND Flash Memories
No Preview Available