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System for Long-Duration Electrical Testing of SiC IC Generation 12 Chips at 500 °CThe system described in this report is an improved testing rig designed to enhance measurement flexibility, provide a compact oven footprint, and reduce costs for parallel oven-testing silicon carbide (SiC) integrated circuit devices at 500 °C for long durations (greater than 100 h). The testing rig design was characterized in terms of the ovens’ internal and external temperatures, system noise, and the leakage properties of their substrate/inner boards, where the devices under test (DUTs) reside. The test rig employs a National Instruments (NI) Peripheral Component Interconnect eXtensions for Instrumentation (PXI) measurement system, room-temperature pin-switching/customizing boards, and high-temperature compact ovens.
Document ID
20240012678
Acquisition Source
Glenn Research Center
Document Type
Technical Memorandum (TM)
Authors
Stephanie Booth
(Glenn Research Center Cleveland, United States)
David Spry
(Glenn Research Center Cleveland, United States)
Philip Neudeck
(Glenn Research Center Cleveland, United States)
Date Acquired
October 2, 2024
Publication Date
January 1, 2025
Publication Information
Publisher: National Aeronautics and Space Administration
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
NASA/TM-20240012678
E-20269
Funding Number(s)
WBS: 811073.02.14.03.30
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert
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