NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structureA shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.
Document ID
19740021071
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Lin, H. C. (Westinghouse Electric Corp. Baltimore, MD, United States)
Halsor, J. L. (Westinghouse Electric Corp. Baltimore, MD, United States)
Date Acquired
September 3, 2013
Publication Date
June 1, 1974
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-132456
Report Number: NASA-CR-132456
Accession Number
74N29184
Funding Number(s)
CONTRACT_GRANT: NAS1-11369
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available