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interpreting space-mission let requirements for segr in power mosfetsA Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.
Document ID
20110015431
Document Type
Reprint (Version printed in journal)
Authors
Lauenstein, J. M.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Ladbury, R. L.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Batchelor, D. A.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Goldsman, N.
(Maryland Univ. College Park, MD, United States)
Kim, H. S.
(MEI Technologies, Inc. Seabrook, MD, United States)
Phan, A. M.
(MEI Technologies, Inc. Seabrook, MD, United States)
Date Acquired
August 25, 2013
Publication Date
December 6, 2010
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 57
Issue: 6
Subject Category
Spacecraft Design, Testing and Performance
Report/Patent Number
GSFC.JA.4810.2011
Meeting Information
Instsitute of Electrical and Electronics Engineers Nuclear and Space Radiation Effects Conference(Denver, CO)
Distribution Limits
Public
Copyright
Other

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